Confinement-enhanced electron transport across a metal-semiconductor interface.

نویسندگان

  • I B Altfeder
  • J A Golovchenko
  • V Narayanamurti
چکیده

We present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb/Si(111) interface. Experiments with a self-assembled Pb nanoscale wedge reveal the phenomenon of confinement-enhanced interfacial transport: a proportional increase of the electron injection rate into the semiconductor with the frequency of electron oscillations in the Pb quantum well.

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عنوان ژورنال:
  • Physical review letters

دوره 87 5  شماره 

صفحات  -

تاریخ انتشار 2001